v rrm = 20 v - 40 v i f(av) = 120 a features ? high surge capability twin tower package ? not esd sensitive parameter symbol mbr12020ct(r) mbr12030ct(r) unit repetitive peak reverse voltage v rrm 20 30 v rms reverse voltage v rms 14 21 v ? types from 20 v to 40 v v rrm mbr12020ct thru mbr12040ctr mbr12040ct(r) 35 25 mbr12035ct(r) maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) silicon power schottk y diode conditions 40 28 dc blocking voltage v dc 20 30 v operating temperature t j -55 to 150 -55 to 150 c storage temperature t stg -55 to 150 -55 to 150 c parameter symbol mbr12020ct(r) mbr12030ct(r) unit average forward current (per pkg) i f(av) 120 120 a maximum forward voltage (per leg) 0.70 0.70 11 10 10 30 30 thermal characteristics thermal resistance, junction-case, per leg r jc 0.80 0.80 c/w t c = 125 c 120 120 peak forward surge current (per leg) i fsm t p = 8.3 ms, half sine 800 800 800 800 30 electrical characteristics, at tj = 25 c, unless otherwise specified reverse current at rated dc blocking voltage (per leg) i r v f a t j = 100 c 10 10 v t j = 25 c i fm = 60 a, t j = 25 c conditions -55 to 150 -55 to 150 mbr12060ct(r) 11 mbr12035ct(r) 0.80 t j = 150 c 0.80 0.70 0.70 30 ma -55 to 150 -55 to 150 40 35 www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 1
mbr12020ct thru mbr12040ctr www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. mbr12020ct thru mbr12040ctr www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 3
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